Title :
Comparison of ionizing radiation effects in 0.18 and 0.25 μm CMOS technologies for analog applications
Author :
Manghisoni, Massimo ; Ratti, Lodovico ; Re, Valerio ; Speziali, Valeria ; Traversi, Gianluca ; Candelori, Andrea
Author_Institution :
Dipt. di Ingegneria Ind.e, Univ. di Bergamo, Dalmine, Italy
Abstract :
We present a comparative study of ionizing radiation effects in 0.18 and 0.25 μm CMOS transistors, with the goal of evaluating the impact of device scaling in the design of low-noise rad-hard analog circuits. Device parameters were monitored before and after irradiation with 10 keV X-rays and 60Co γ-rays and after subsequent annealing. The effects of different biasing conditions during irradiation and annealing are discussed. The results are used to point out the different radiation hardness properties of the examined technologies, belonging to different CMOS generations.
Keywords :
1/f noise; CMOS analogue integrated circuits; X-ray effects; annealing; gamma-ray effects; integrated circuit noise; radiation hardening (electronics); thermal noise; 1/f noise; 10 keV; CMOS transistors; annealing; biasing conditions; device scaling; front-end electronics; ionizing radiation effects; low-noise rad-hard analog circuits; radiation hardness properties; threshold voltage; total dose; Analog circuits; Annealing; CMOS analog integrated circuits; CMOS technology; Ionizing radiation; Leakage current; MOSFETs; Physics; Radiation hardening; X-rays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820767
