Title :
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices
Author :
Schoenmaker, W. ; Quan Chen ; Galy, Ph
Author_Institution :
Magwel NV, Leuven, Belgium
Abstract :
We present a full physical simulation picture of the electromagnetic phenomena combining electromagnetic (EM) fields and carrier transport in semiconductor devices (TCAD) in the transient regime. The simulation tool computes the EM fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force (LF).
Keywords :
electromagnetic fields; electromagnetic forces; integrated circuits; magnetic field effects; semiconductor device models; thyristors; transient analysis; EM fields; Lorentz force; TCAD; carrier transport; current sources; electromagnetic fields; electromagnetic phenomena; fast-transient phenomena; integrated circuit devices; self-induced magnetic field effects; semiconductor devices; simulation tool; Current density; Equations; Lorentz covariance; Mathematical model; Metals; Transient analysis; Vectors; Electromagnetics; Lorentz force (LF); TCAD; Transient;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
DOI :
10.1109/TCAD.2014.2303050
