Title :
Probing proton damage in SOI CMOS technology by using lateral bipolar action
Author :
Li, Ying ; Niu, Guofu ; Cressler, John D. ; Patel, Jagdish ; Liu, Mike ; Mojarradi, Mohammad M. ; Reed, Robert A. ; Marshall, Paul W. ; Blalock, Benjamin J.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
We investigate proton damage in SOI CMOS devices on UNIBOND using a variety of lateral bipolar operational modes. We show that the impact of interface states and oxide charge can be more clearly observed using lateral bipolar action than by using normal FET operational characteristics. We also investigate the radiation-induced interface states at the Si/buried oxide interface and oxide charges in the buried oxide of this SOI CMOS technology using the DCIV method.
Keywords :
MOSFET; buried layers; gamma-ray effects; interface states; radiation hardening (electronics); silicon; silicon-on-insulator; SOI CMOS technology; SOI MOSFET; Si; UNIBOND; back-gate transistor; buried oxide interface; collector current characteristics; interface traps; lateral bipolar action; oxide charge; proton damage; radiation-induced charge; radiation-induced interface states; Bipolar transistors; CMOS technology; Current measurement; FETs; Interface states; MOSFET circuits; Microelectronics; Protons; Radiative recombination; Solid state circuits;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.822088
