Probing proton damage in SOI CMOS technology by using lateral bipolar action

Author

Li, Ying ; Niu, Guofu ; Cressler, John D. ; Patel, Jagdish ; Liu, Mike ; Mojarradi, Mohammad M. ; Reed, Robert A. ; Marshall, Paul W. ; Blalock, Benjamin J.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

Volume

50

Issue

6

fYear

2003

Firstpage

1885

Lastpage

1890

Abstract

We investigate proton damage in SOI CMOS devices on UNIBOND using a variety of lateral bipolar operational modes. We show that the impact of interface states and oxide charge can be more clearly observed using lateral bipolar action than by using normal FET operational characteristics. We also investigate the radiation-induced interface states at the Si/buried oxide interface and oxide charges in the buried oxide of this SOI CMOS technology using the DCIV method.

Keywords

MOSFET; buried layers; gamma-ray effects; interface states; radiation hardening (electronics); silicon; silicon-on-insulator; SOI CMOS technology; SOI MOSFET; Si; UNIBOND; back-gate transistor; buried oxide interface; collector current characteristics; interface traps; lateral bipolar action; oxide charge; proton damage; radiation-induced charge; radiation-induced interface states; Bipolar transistors; CMOS technology; Current measurement; FETs; Interface states; MOSFET circuits; Microelectronics; Protons; Radiative recombination; Solid state circuits;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.822088

Filename

1263816