DocumentCode :
879255
Title :
Distortion in high-frequency FET amplifiers
Author :
Khadr, A.M. ; Johnston, Ronald H.
Volume :
9
Issue :
4
fYear :
1974
Firstpage :
180
Lastpage :
189
Abstract :
A high-frequency nonlinear model of FET´s is developed in which all sources of nonlinearities, including the output conductance, are accounted for. The distortion resulting from this model is represented using the Volterra series approach, and a high degree of accuracy between the theory and the measured results is obtained. Although the theory holds only for circuits that exhibit a slight deviation from linearity, it is found that fairly good agreement exists at larger signal levels. Harmonic, intermodulation, and cross-modulation distortion (CMD) that occur in a typical high-frequency single-stage FET amplifier are all analyzed and experimentally verified. It is observed that the CMD that occurs in the FET under consideration is of the AM type.
Keywords :
Electric distortion; Field effect transistors; High-frequency amplifiers; Semiconductor device models; electric distortion; field effect transistors; high-frequency amplifiers; semiconductor device models; Capacitance; Circuits; Design automation; Distortion measurement; FETs; Frequency dependence; Linearity; Performance analysis; Taylor series; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1974.1050493
Filename :
1050493
Link To Document :
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