DocumentCode
879288
Title
Mechanisms for radiation dose-rate sensitivity of bipolar transistors
Author
Hjalmarson, Harold P. ; Pease, Ronald L. ; Witczak, Steven C. ; Shaneyfelt, Marty R. ; Schwank, James R. ; Edwards, Arthur H. ; Hembree, Charles E. ; Mattsson, Thomas R.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
50
Issue
6
fYear
2003
Firstpage
1901
Lastpage
1909
Abstract
Mechanisms for enhanced low-dose-rate sensitivity are described. In these mechanisms, bimolecular reactions dominate the kinetics at high dose rates thereby causing a sub-linear dependence on total dose, and this leads to a dose-rate dependence. These bimolecular mechanisms include electron-hole recombination, hydrogen recapture at hydrogen source sites, and hydrogen dimerization to form hydrogen molecules. The essence of each of these mechanisms is the dominance of the bimolecular reactions over the radiolysis reaction at high dose rates. However, at low dose rates, the radiolysis reaction dominates leading to a maximum effect of the radiation.
Keywords
bipolar transistors; electron-hole recombination; interface states; radiation hardening (electronics); radiolysis; bimolecular reactions; bipolar transistors; electron-hole recombination; enhanced low-dose-rate sensitivity; hydrogen dimerization; hydrogen recapture; hydrogen source sites; radiation dose-rate sensitivity; radiolysis reaction; sub-linear dependence; total dose; Associate members; Bipolar transistors; Charge carrier processes; Electron traps; Hydrogen; Kinetic theory; Laboratories; Protons; Space charge; Spontaneous emission;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.821803
Filename
1263819
Link To Document