• DocumentCode
    879332
  • Title

    Computer simulation of u.h.f.-transistor small-signal behaviour at high frequencies

  • Author

    Caughey, D.M.

  • Volume
    5
  • Issue
    8
  • fYear
    1969
  • Firstpage
    165
  • Lastpage
    167
  • Abstract
    High-frequency 2-port parameters of a u.h.f. transistor are presented, which have been derived from the numerical 1-dimensional solution of small-signal internal behaviour. Results shown include the ¿locus and the determination of fT from hfe in the gigahertz region. The validity of the II equivalent circuit is discussed.
  • Keywords
    bipolar transistors; equivalent circuits; semiconductor device models; solid-state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690124
  • Filename
    4210339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879332