DocumentCode
879406
Title
Comparison of CCD damage due to 10- and 60-MeV protons
Author
Hopkinson, Gordon R. ; Mohammadzadeh, Ali
Author_Institution
Sira Electro-Opt. Ltd., Chislehurst, UK
Volume
50
Issue
6
fYear
2003
Firstpage
1960
Lastpage
1967
Abstract
Dark current and charge transfer inefficiency (CTI) data are presented for three charge-coupled devices (CCD) device types after 9.5- and 60-MeV proton irradiation. Comparison of the damage at the two energies allows a test of the validity of NIEL scaling. The ratio of the damage at 9.5 MeV to that at 60 MeV was found to be 35% higher for the CTI than for the average bulk dark current, for the devices tested. Both the CTI and the dark current showed significant annealing at 150°C, and this has implications for the lattice defects involved. Cobalt-60 data are also discussed.
Keywords
annealing; charge exchange; charge-coupled devices; energy loss of particles; proton effects; radiation hardening (electronics); 10-MeV protons; 150 degC; 60 MeV; 60-MeV protons; 9.5 MeV; CCD damage; NIEL scaling; charge transfer inefficiency; charge-coupled devices; dark current; nonionizing energy loss; Charge coupled devices; Charge transfer; Dark current; Fluctuations; Instruments; Lattices; Protons; Silicon; Temperature; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.821409
Filename
1263828
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