Ion-implanted ESFI MOS devices with short switching times

Switching times of complementary MOS devices realized with epitaxial silicon films on insulators (ESFI) are reduced by using a self-aligning technique with ion implantation, since the gate overlapping capacitances and therefore the so-called Miller capacitances, are reduced thereby. Switching times and power dissipation have been measured using multistage ring oscillators. Stage-delay times of 500 ps at a supply voltage of 10 V (800 ps at 5 V), and power-delay products of 0.5 pJ at 5 V, have been obtained at five-stage ring oscillators with a channel length of about 3 μm. Calculated and measured results are compared, and a simple formula for calculating the influence of the Miller capacitance on the switching times is indicated.