Title :
Neutron irradiation effects in GaN-based blue LEDs
Author :
Li, ChyiShiun ; Subramanian, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
The neutron irradiation effects in GaN-based double heterojunction (DH) light-emitting diodes (LEDs) are investigated. Both optical and electrical properties showed significant degradation after neutron irradiation. The basic mechanisms responsible for both electrical and optical degradation are discussed. Some optical and electrical recovery due to an injection-enhanced annealing effect is observed in our irradiated LEDs.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; neutron effects; radiation hardening (electronics); wide band gap semiconductors; GaN; GaN-based blue LEDs; double heterojunction light-emitting diodes; electrical properties; neutron irradiation effects; optical properties; Annealing; DH-HEMTs; Degradation; Gallium nitride; Heterojunctions; Light emitting diodes; Neutrons; Optical materials; Protons; Radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821610
