• DocumentCode
    879523
  • Title

    M.I.S. capacitance in heavy inversion

  • Author

    Esteve, D.J.

  • Volume
    5
  • Issue
    9
  • fYear
    1969
  • Firstpage
    194
  • Lastpage
    195
  • Abstract
    The letter deals with a theoretical analysis of the different currents originating in an m.i.s. structure for a heavy inversion region of operation, when a transient low-level electrical perturbation is applied. The expression for the generation-recombination current in the space-charge region is fairly different from that generally used; it is emphasised that the recombination rate is not constant and not equal to ni/2¿n in the whole thickness of the transition zone.
  • Keywords
    capacitance; metal-insulator-semiconductor structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690147
  • Filename
    4210361