DocumentCode
879523
Title
M.I.S. capacitance in heavy inversion
Author
Esteve, D.J.
Volume
5
Issue
9
fYear
1969
Firstpage
194
Lastpage
195
Abstract
The letter deals with a theoretical analysis of the different currents originating in an m.i.s. structure for a heavy inversion region of operation, when a transient low-level electrical perturbation is applied. The expression for the generation-recombination current in the space-charge region is fairly different from that generally used; it is emphasised that the recombination rate is not constant and not equal to ni/2¿n in the whole thickness of the transition zone.
Keywords
capacitance; metal-insulator-semiconductor structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690147
Filename
4210361
Link To Document