DocumentCode :
879523
Title :
M.I.S. capacitance in heavy inversion
Author :
Esteve, D.J.
Volume :
5
Issue :
9
fYear :
1969
Firstpage :
194
Lastpage :
195
Abstract :
The letter deals with a theoretical analysis of the different currents originating in an m.i.s. structure for a heavy inversion region of operation, when a transient low-level electrical perturbation is applied. The expression for the generation-recombination current in the space-charge region is fairly different from that generally used; it is emphasised that the recombination rate is not constant and not equal to ni/2¿n in the whole thickness of the transition zone.
Keywords :
capacitance; metal-insulator-semiconductor structures;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690147
Filename :
4210361
Link To Document :
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