Title :
Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node
Author :
Roche, P. ; Gasiot, G. ; Forbes, K. ; O´Sullivan, V. ; Ferlet, V.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper presents experimental ASER on SOI and BULK SRAMs for the 250-, 130-, and 90-nm technologies. The key parameters controlling soft error rate (SER) in these technologies are modeled with Monte Carlo simulations to predict SER to the 65-nm node.
Keywords :
Monte Carlo methods; SRAM chips; radiation hardening (electronics); silicon-on-insulator; 130 nm; 130-nm technology node; 250 nm; 65 nm; 90 nm; Monte Carlo simulations; SRAMs; commercial SOI; soft error rate; Alpha particles; Atmospheric modeling; Error analysis; Manufacturing; Monte Carlo methods; Neutrons; Paper technology; Random access memory; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821588
