DocumentCode
879538
Title
Experimental evidence of transit-time effects in silicon punch-through diodes
Author
Dascalu, D.
Volume
5
Issue
9
fYear
1969
Firstpage
196
Lastpage
198
Abstract
Small-signal frequency characteristics indicating the effect of hole transit times were measured for `punch-through¿ p¿v¿p silicon diodes. The transit time was sufficiently long to allow measurements in a relatively low frequency range (0.5¿18MHz), thus avoiding parasitic effects. Experimental results for several operating points in the square-law region of the d.c. characteristic agree very well with the theoretical frequency characteristics.
Keywords
elemental semiconductors; semiconductor diodes; transit time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690149
Filename
4210363
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