Characteristics of System in a Package of Synchronous Dynamic Random Access Memory for High-Speed Data Storage Applications

Author

Yeong-Lin Lai ; Wen-Jung Chiang

Author_Institution

Dept. of Mechatron. Eng., Nat. Changhua Univ. of Educ., Changhua, Taiwan

Volume

50

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

1

Lastpage

5

Abstract

This paper proposes a system in a package (SiP) integrating a system on a chip (SoC) and a double-data-rate-three synchronous dynamic random access memory (DDR3 SDRAM) for advanced data-storage-based systems. The characteristics of high frequency, signal integrity (SI), and power integrity (PI) were investigated for the SoC/DDR3-SDRAM SiP. The SiP exhibited low insertion loss, wide eye-diagram aperture, and low power impedance. The effect of de-coupling capacitors on the SiP was also examined. The SoC/DDR3-SDRAM SiP achieved excellent performance for high-speed data storage applications.

Keywords

random-access storage; system-in-package; system-on-chip; DDR3 SDRAM; SiP; SoC; de-coupling capacitors; double-data-rate-three synchronous dynamic random access memory; high-speed data storage; insertion loss; power impedance; power integrity; signal integrity; synchronous dynamic random access memory package; system in a package; system on a chip; Apertures; Capacitors; Couplings; Insertion loss; SDRAM; Silicon; System-on-chip; Power integrity (PI); signal integrity (SI); synchronous dynamic random access memory (SDRAM); system in a package (SiP);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2014.2306797

Filename

6851288