• DocumentCode
    879560
  • Title

    Soft error rate increase for new generations of SRAMs

  • Author

    Granlund, Thomas ; Granbom, Bo ; Olsson, Nils

  • Author_Institution
    Electromagn. Technol. Div., Saab Avionics AB, Linkoping, Sweden
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2065
  • Lastpage
    2068
  • Abstract
    We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
  • Keywords
    SRAM chips; neutron effects; radiation hardening (electronics); SRAMs; neutron-induced soft errors; soft error rate; static random access memories; susceptibility; Aerospace electronics; Aircraft; Error analysis; Life estimation; Manufacturing; Neutrons; Random access memory; SRAM chips; Single event upset; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821593
  • Filename
    1263843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879560