Title :
Soft error rate increase for new generations of SRAMs
Author :
Granlund, Thomas ; Granbom, Bo ; Olsson, Nils
Author_Institution :
Electromagn. Technol. Div., Saab Avionics AB, Linkoping, Sweden
Abstract :
We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.
Keywords :
SRAM chips; neutron effects; radiation hardening (electronics); SRAMs; neutron-induced soft errors; soft error rate; static random access memories; susceptibility; Aerospace electronics; Aircraft; Error analysis; Life estimation; Manufacturing; Neutrons; Random access memory; SRAM chips; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821593
