Title :
Modeling single-event effects in a complex digital device
Author :
Clark, Kenneth A. ; Ross, Alan A. ; Loomis, Hersch H. ; Weatherford, Todd R. ; Fouts, Douglas J. ; Buchner, Stephen P. ; McMorrow, Dale
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A methodology to quantify the impact of SEEs on complex digital devices has been developed. This methodology is based on the SEE State-Transition Model and was validated by radiation testing of a complex digital device.
Keywords :
radiation hardening (electronics); semiconductor device models; complex digital device; modeling single-event effects; Circuit faults; Costs; Helium; Logic gates; Microprocessors; Predictive models; Radiation effects; Registers; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821793
