DocumentCode :
879581
Title :
Investigation of single-event transients in voltage-controlled oscillators
Author :
Chen, Wenjian ; Pouget, Vincent ; Barnaby, Hugh J. ; Cressler, John D. ; Niu, Guofu ; Fouillat, Pascal ; Deval, Yann ; Lewis, Dean
Author_Institution :
Univ. of Arizona, Tucson, AZ, USA
Volume :
50
Issue :
6
fYear :
2003
Firstpage :
2081
Lastpage :
2087
Abstract :
The responses of voltage-controlled oscillators (VCOs) to single-event transients (SETs) are investigated. Laser testing and simulations indicate that ion strikes on critical transistors cause distortions in the oscillating output. The time it takes for the circuit to resume its normal operating condition is limited by the recovery time of the affected transistor(s) and the oscillator startup time. These limits to circuit recovery time are the primary causes of the frequency dependence of SET responses in VCOs.
Keywords :
heterojunction bipolar transistors; radiation hardening (electronics); voltage-controlled oscillators; SET responses; VCOs; circuit recovery time; critical transistors; frequency dependence; laser testing; normal operating condition; oscillating output; oscillator startup time; single-event transients; voltage-controlled oscillators; Analog circuits; Circuit simulation; Circuit testing; Germanium silicon alloys; Laser noise; Nonlinear distortion; Phase locked loops; Radio frequency; Silicon germanium; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.820766
Filename :
1263845
Link To Document :
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