Title :
Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe2 solar cells
Author :
Devaney, W.E. ; Chen, W.S. ; Stewart, J.M. ; Mickelsen, R.A.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
Thin-film polycrystalline solar cells with the structure ZnO/CdZnS/CuInGaSe2 fabricated with total area efficiencies of up to 12.5% under AM1.5 equivalent illumination and 10.5% under AM0 equivalent are discussed. These are among the highest total area efficiencies reported for polycrystalline thin-film solar cells. Current-voltage and quantum efficiency data for such a high-efficiency cell are given. Described are the deposition of the CuInGaSe2 by physical vapor deposition in vacuum, the CdZnS by chemical deposition from solution, and the ZnO by reactive sputtering. The electrical and optical properties of the individual layers have been inferred from measurements on complete devices and on separate witness layers. Optical constants and thicknesses obtained for the device layers from these measurements are presented, and the requirements for optimizing the device efficiency are discussed
Keywords :
crystal growth from solution; semiconductor technology; solar cells; sputter deposition; vapour deposition; 10.5 percent; 12.5 percent; AM0 equivalent; AM1.5 equivalent illumination; ZnO-CdZnS-CuInGaSe2; chemical deposition from solution; current voltage data; device efficiency; device layers; efficiencies; electrical properties; high efficiency solar cells; measurements on complete devices; optical constants; optical properties; physical vapor deposition; polycrystalline thin-film solar cells; quantum efficiency; reactive sputtering; separate witness layers; structure; Chemical vapor deposition; Conductivity; Electromagnetic wave absorption; Lighting; Optical devices; Photonic band gap; Photovoltaic cells; Sputtering; Voltage; Zinc oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
