• DocumentCode
    879636
  • Title

    Accuracy of relaxation time approximation for device simulation of submicrometre GaAs MESFETs

  • Author

    Yamada, Y. ; Tomita, T.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ., Japan
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    393
  • Lastpage
    395
  • Abstract
    The accuracy of some models based on the relaxation time approximation is studied in a transient device simulation of submicrometre GaAs MESFETs using an ensemble Monte-Carlo simulation. It is shown that contributions of the outflow of momentum density v. Delta v and the kinetic energy m*v2/2 are not negligibly small.
  • Keywords
    III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; carrier relaxation time; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; device simulation; ensemble Monte-Carlo simulation; kinetic energy; models; momentum density; relaxation time approximation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920246
  • Filename
    126385
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879636