Three-dimensional mapping of single-event effects using two photon absorption

Author

McMorrow, Dale ; Lotshaw, William T. ; Melinger, Joseph S. ; Buchner, Stephen ; Boulghassoul, Younes ; Massengill, Lloyd W. ; Pease, Ronald L.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

50

Issue

6

fYear

2003

Firstpage

2199

Lastpage

2207

Abstract

Carrier generation based on subbandgap two-photon absorption is used to perform three-dimensional mapping of the single-event transient response of the LM124 operational amplifier. Three classes of single-event-induced transients are observed for the input transistor Q20. A combination of experiment and transistor level modeling is used to assign the different classes of measured transients to charge collection across specific junctions. The large-amplitude, positive-going transients cannot be assigned to a single junction, and are identified with a collector-substrate photocurrent.

Keywords

gamma-ray effects; integrated circuit testing; operational amplifiers; radiation hardening (electronics); two-photon processes; LM124 operational amplifier; charge collection; collector-substrate photocurrent; input transistor Q20; large-amplitude positive-going transients; measured transients; single-event effects; three-dimensional mapping; two photon absorption; Absorption; Circuits; Nonlinear optics; Operational amplifiers; Optical amplifiers; Optical pulse generation; Pulse amplifiers; Semiconductor lasers; Semiconductor materials; Ultrafast optics;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.820742

Filename

1263861