DocumentCode
879793
Title
High-efficiency continuous oscillations in silicon IMPATT diodes below the transit-time frequency
Author
Thomson, I.
Volume
5
Issue
11
fYear
1969
Firstpage
229
Lastpage
230
Abstract
C.W. room-temperature operation of silicon IMPATT diodes at the first subharmonic of the transit-time frequency has been observed in a high-efficiency mode. Efficiencies as high as 8.8% at 5GHz with 1.2 Wc.w. have been achieved with current densities no more than 1480A/cm2.
Keywords
IMPATT diodes; avalanche diodes; semiconductor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690174
Filename
4210390
Link To Document