X-band MIC GaAs IMPATT amplifier module

A compact (2.0 by 1.6 in), light weight (2.1 oz), microwave integrated circuit (MIC) GaAs IMPATT amplifier module having 3.6-W pulsed output power with a gain of 22.5 dB over the 9.2-9.8 GHz band has been developed for phased array radar applications. The design goal for the module was 4-W pulsed output power with 23-dB gain over this frequency band. The module has been operated over a wide range of pulse lengths (200 ns-50 /spl mu/s) and duty factors (0.5-40 percent) with outstanding pulse fidelity. The totally integrated module consists of three IMPATT reflection amplifier stages in cascade with input and output isolators and a transmit/receive switch. Each amplifier stage has an independent hybrid thin film constant current pulse modulator. The design considerations of the essential components for final module integration, and the microwave performance characteristics are presented.