Title :
Total dose hardness assurance testing using laboratory radiation sources
Author :
Paillet, P. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Ferlet-Cavrois, V. ; Jones, R.L. ; Flament, O. ; Blackmore, E.W.
Author_Institution :
CEA/DIF, France
Abstract :
NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons, and compared with values obtained for X-ray and Co-60 irradiations.
Keywords :
MOSFET; X-ray effects; electron beam effects; gamma-ray effects; proton effects; radiation hardening (electronics); semiconductor device testing; silicon-on-insulator; space vehicle electronics; NMOS transistors; SOI transistors; X-ray radiation sources; charge yield; electron radiation sources; gamma radiation sources; initial recombination; laboratory radiation sources; proton radiation sources; qualification testing; radiation-induced charge; space environment; stopping powers; threshold voltage shifts; total dose hardness assurance testing; CMOS technology; Degradation; Electrons; Isolation technology; Laboratories; MOSFETs; Protons; Testing; Threshold voltage; Yield estimation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821392
