Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity
Author :
Gueret, P.
Volume :
5
Issue :
11
fYear :
1969
Firstpage :
248
Lastpage :
249
Abstract :
It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification.
Keywords :
diffusion in solids; semiconductor materials; space charge;