Title :
Heavy-ion single-event effects testing of lead-on-chip assembled high-density memories
Author :
Harboe-Sorensen, R. ; Guerre, F.-X. ; Loquet, J.-G. ; Tizon, C.
Author_Institution :
Eur. Space Agency, Noordwijk, Netherlands
Abstract :
For space applications, can cost-effective and reliable heavy ion single-event effect (SEE) testing still be carried out on commercially available, plastic packaged, high-density memories? Their complexity, architecture, and packaging assemblies as well as their short life cycle pose many practical problems that needs to be tackled. This paper summarizes steps taken by the European Space Agency in order to address these issues.
Keywords :
DRAM chips; SRAM chips; chip scale packaging; integrated circuit testing; ion beam effects; plastic packaging; radiation hardening (electronics); space vehicle electronics; SDRAM; SRAM; destructive physical analysis; heavy-ion single-event effects; high-density memories; lead-on-chip assembled memories; plastic packaged; sample preparation methods; test facilities; Assembly; DRAM chips; Etching; Lab-on-a-chip; Plastic packaging; Random access memory; SDRAM; Single event upset; System testing; Test facilities;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821402
