DocumentCode
880021
Title
Heavy-ion single-event effects testing of lead-on-chip assembled high-density memories
Author
Harboe-Sorensen, R. ; Guerre, F.-X. ; Loquet, J.-G. ; Tizon, C.
Author_Institution
Eur. Space Agency, Noordwijk, Netherlands
Volume
50
Issue
6
fYear
2003
Firstpage
2322
Lastpage
2327
Abstract
For space applications, can cost-effective and reliable heavy ion single-event effect (SEE) testing still be carried out on commercially available, plastic packaged, high-density memories? Their complexity, architecture, and packaging assemblies as well as their short life cycle pose many practical problems that needs to be tackled. This paper summarizes steps taken by the European Space Agency in order to address these issues.
Keywords
DRAM chips; SRAM chips; chip scale packaging; integrated circuit testing; ion beam effects; plastic packaging; radiation hardening (electronics); space vehicle electronics; SDRAM; SRAM; destructive physical analysis; heavy-ion single-event effects; high-density memories; lead-on-chip assembled memories; plastic packaged; sample preparation methods; test facilities; Assembly; DRAM chips; Etching; Lab-on-a-chip; Plastic packaging; Random access memory; SDRAM; Single event upset; System testing; Test facilities;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.821402
Filename
1263880
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