Title :
Impact of mechanical stress on total-dose effects in bipolar ICs
Author :
Boch, J. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Cizmarik, R.R. ; Saigné, F.
Author_Institution :
Univ. de Reims, France
Abstract :
Experiments conducted at high and low dose rates show that the total dose response of bipolar linear integrated circuits is influenced by mechanical stress. The role of mechanical stress on enhanced low dose rate sensitivity is discussed.
Keywords :
X-ray effects; bipolar analogue integrated circuits; gamma-ray effects; interface states; passivation; radiation hardening (electronics); stress effects; bipolar linear integrated circuits; enhanced low dose rate sensitivity; mechanical stress; numerical simulations; passivation layer; radiation response; total dose response; Analog integrated circuits; Bipolar transistors; Capacitive sensors; Circuit simulation; Computational modeling; Computer simulation; Electric variables; Electronic switching systems; Passivation; Tensile stress;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820768
