Title :
SEE characterization of vertical DMOSFETs: an updated test protocol
Author :
Titus, Jeffrey L. ; Wheatley, C. Frank
Author_Institution :
NAVSEA Crane, IN, USA
Abstract :
The test protocols for power MOSFETs used in the manufacturer´s specification sheets are inadequate in that they do not represent a realistic worst-case condition. In addition, the applicable single-event effects (SEE) test methods and guidelines do not provide sufficient details to the user as to what conditions should be used, placing an undue burden on them. This paper addresses several of these deficiencies and others. We present a new test protocol; we suggest a new approach to describe the SEE response; and we provide a model to predict critical ion energies that should produce a worst-case response.
Keywords :
impact ionisation; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; LET profile; SEE characterization; breakdown voltage; critical ion energies; ion energy model; penetration depth; power MOSFET; single-event burnout; single-event gate rupture; updated test protocol; vertical DMOSFET; worst-case response; Atomic layer deposition; Cranes; Guidelines; Life testing; MOSFETs; Manufacturing; Predictive models; Protocols; Semiconductor process modeling; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820733
