DocumentCode
880099
Title
Effects of interface traps on the transconductance and drain current of InP MISFET´s
Author
Chen, Chang-Lee ; Calawa, Arthur R. ; Courtney, William E. ; Mahoney, Leonard J. ; Palmateer, Susan C. ; Manfra, Michael J. ; Hollis, Mark A.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
39
Issue
8
fYear
1992
fDate
8/1/1992 12:00:00 AM
Firstpage
1797
Lastpage
1804
Abstract
The drain current, transconductance, and output resistance of an InP MISFET are shown to depend strongly on the frequency and amplitude of an AC signal applied to the gate. This dependence exists even though the familiar long-term current drift effect is negligible. To explain this phenomenon a new nonequilibrium interface-trap model is proposed
Keywords
III-V semiconductors; indium compounds; insulated gate field effect transistors; interface electron states; semiconductor device models; AC signal; InP transistor; MISFET; drain current; long-term current drift effect; nonequilibrium interface-trap model; output resistance; semiconductors; signal amplitude; signal frequency; transconductance; FETs; Gallium arsenide; Indium phosphide; Insulation; MISFETs; Molecular beam epitaxial growth; Radio frequency; Radiofrequency amplifiers; Thermal conductivity; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.144667
Filename
144667
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