Title :
GSMBE grown (GaIn)P/GaAs heterojunction bipolar transistors exhibiting current gains up to 590
Author :
Lu, S. ; Huang, C.C.
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The first lattice-matched Ga0.51In0.49P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy is reported. Small signal current gains exceeding 590 and small offset voltages ( approximately 120 meV) were obtained. These results demonstrate that (GaIn)P is a good alternative to the (AlGa)As in GaAs-based devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GSMBE; Ga 0.51In 0.49P-GaAs; current gains; gas-source molecular beam epitaxy; heterojunction bipolar transistors; lattice-matched; offset voltages; signal current gains;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920250
