DocumentCode
880206
Title
A high voltage MOS switch
Author
Saraswat, Krishna C. ; Meindl, James D. ; Berger, Josef
Volume
10
Issue
3
fYear
1975
fDate
6/1/1975 12:00:00 AM
Firstpage
136
Lastpage
142
Abstract
A novel MOS high voltage switch suitable for use in integrated circuits is described. The device doubles the operational voltage capability, compared to the standard MOS transistor used in integrated circuits. It uses a unique variable positive feedback which increases dramatically its saturation current and permits significant saving of the circuit area. The switch is fabricated using common Sigate technology. No additional processing steps are required.
Keywords
Feedback; Field effect transistors; Monolithic integrated circuits; Semiconductor switches; feedback; field effect transistors; monolithic integrated circuits; semiconductor switches; Breakdown voltage; Electric breakdown; Feedback circuits; Integrated circuit technology; Low voltage; MOSFETs; P-n junctions; Switches; Switching circuits; Transducers;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050578
Filename
1050578
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