Title :
A high voltage MOS switch
Author :
Saraswat, Krishna C. ; Meindl, James D. ; Berger, Josef
fDate :
6/1/1975 12:00:00 AM
Abstract :
A novel MOS high voltage switch suitable for use in integrated circuits is described. The device doubles the operational voltage capability, compared to the standard MOS transistor used in integrated circuits. It uses a unique variable positive feedback which increases dramatically its saturation current and permits significant saving of the circuit area. The switch is fabricated using common Sigate technology. No additional processing steps are required.
Keywords :
Feedback; Field effect transistors; Monolithic integrated circuits; Semiconductor switches; feedback; field effect transistors; monolithic integrated circuits; semiconductor switches; Breakdown voltage; Electric breakdown; Feedback circuits; Integrated circuit technology; Low voltage; MOSFETs; P-n junctions; Switches; Switching circuits; Transducers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050578
