DocumentCode
880209
Title
Limitations of the back-to-back barrier-intrinsic-n+ (BIN) diode frequency tripler
Author
Hwu, R. Jennifer ; Sadwick, Larry P.
Author_Institution
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Volume
39
Issue
8
fYear
1992
fDate
8/1/1992 12:00:00 AM
Firstpage
1805
Lastpage
1810
Abstract
Problems of the back-to-back GaAs barrier-intrinsic-n+ (BIN) diode frequency tripler concept along with the associated device physics are presented. The back-to-back GaAs BIN diode structure was originally proposed to have an intrinsic cutoff frequency close to 1 THz and to be a highly efficient millimeter-wave frequency tripler. Frequency limitations will be discussed to explain the failure of the back-to-back GaAs BIN diode as a millimeter-wavelength device. Optimization is also carried out to explore the possibility of improving the high-frequency performance by modifying the BIN diode structure
Keywords
III-V semiconductors; electronic engineering computing; frequency multipliers; gallium arsenide; semiconductor device models; semiconductor diodes; solid-state microwave devices; 1 THz; BIN diode structure; GaAs diode frequency tripler; back-to-back BIN diode frequency tripler; barrier intrinsic n+ diode; computer model; device simulation model; frequency limitation; high-frequency performance; intrinsic cutoff frequency; millimeter-wavelength device; optimisation; semiconductor; Capacitance; Capacitors; Cutoff frequency; Gallium arsenide; Millimeter wave technology; Physics; Power generation; Semiconductor diodes; Switches; Varactors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.144668
Filename
144668
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