Title :
Calculator-aided design of MOS integrated circuits
Author :
Vladimirescu, Andrei
fDate :
6/1/1975 12:00:00 AM
Abstract :
A set of programs has been developed for the characterization of the d.c. and transient behavior of MOS integrated circuits. The d.c. analysis program calculates and plots the voltage transfer and power dissipation characteristic of a MOS inverter approached from a new point of view. The algorithm enables the characterization of basic MOS IC cells on desktop calculators. The program for the transient characterization calculates and plots the output waveform of three simple MOS cells most often occurring in MOS IC´s.The MOS transistor is simulated in terms of a four-terminal large signal model described by device processing parameters. Complex MOS IC´s can be also characterized by appropriate combining of these programs.
Keywords :
Computer-aided circuit design; Metal-insulator-semiconductor devices; Monolithic integrated circuits; computer-aided circuit design; metal-insulator-semiconductor devices; monolithic integrated circuits; Algorithm design and analysis; Calculators; Capacitance; Circuit analysis computing; Driver circuits; Inverters; MOS devices; MOS integrated circuits; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050580
