DocumentCode
880233
Title
Calculator-aided design of MOS integrated circuits
Author
Vladimirescu, Andrei
Volume
10
Issue
3
fYear
1975
fDate
6/1/1975 12:00:00 AM
Firstpage
151
Lastpage
161
Abstract
A set of programs has been developed for the characterization of the d.c. and transient behavior of MOS integrated circuits. The d.c. analysis program calculates and plots the voltage transfer and power dissipation characteristic of a MOS inverter approached from a new point of view. The algorithm enables the characterization of basic MOS IC cells on desktop calculators. The program for the transient characterization calculates and plots the output waveform of three simple MOS cells most often occurring in MOS IC´s.The MOS transistor is simulated in terms of a four-terminal large signal model described by device processing parameters. Complex MOS IC´s can be also characterized by appropriate combining of these programs.
Keywords
Computer-aided circuit design; Metal-insulator-semiconductor devices; Monolithic integrated circuits; computer-aided circuit design; metal-insulator-semiconductor devices; monolithic integrated circuits; Algorithm design and analysis; Calculators; Capacitance; Circuit analysis computing; Driver circuits; Inverters; MOS devices; MOS integrated circuits; Silicon; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050580
Filename
1050580
Link To Document