• DocumentCode
    880246
  • Title

    All-optical pressure sensor with temperature compensation on resonant PECVD silicon nitride microstructures

  • Author

    Unzeitig, H. ; Bartelt, Hartmut

  • Author_Institution
    Siemens AG Corp. Res., Erlangen, Germany
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    400
  • Lastpage
    402
  • Abstract
    A novel sensor is presented incorporating easy separation of pressure and temperature sensitivity, both of which affect the frequency of a resonating bridge. With PECVD silicon nitride as bridge material, pressure sensitivities up to 86% per bar were achieved.
  • Keywords
    compensation; nonelectric sensing devices; plasma CVD coatings; pressure transducers; silicon compounds; PECVD; Si; Si 3N 4-Si; all-optical pressure sensor; bridge material; pressure sensitivities; resonating bridge; temperature compensation; temperature sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920251
  • Filename
    126390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880246