Title :
A new C-MOS technology using anisotropic etching of silicon
Author :
Declercq, M.J. ; Declercq, Michel J.
Abstract :
Anisotropic etching is performed on
Keywords :
Elemental semiconductors; Etching; Integrated circuit production; Monolithic integrated circuits; Silicon; elemental semiconductors; etching; integrated circuit production; monolithic integrated circuits; silicon; Anisotropic magnetoresistance; Application specific integrated circuits; Electron devices; Etching; Integrated circuit technology; MOSFETs; Propellants; Silicon; Space technology; Surface waves;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050592
