DocumentCode
880374
Title
A new C-MOS technology using anisotropic etching of silicon
Author
Declercq, M.J. ; Declercq, Michel J.
Volume
10
Issue
4
fYear
1975
Firstpage
191
Lastpage
197
Abstract
Anisotropic etching is performed on
Keywords
Elemental semiconductors; Etching; Integrated circuit production; Monolithic integrated circuits; Silicon; elemental semiconductors; etching; integrated circuit production; monolithic integrated circuits; silicon; Anisotropic magnetoresistance; Application specific integrated circuits; Electron devices; Etching; Integrated circuit technology; MOSFETs; Propellants; Silicon; Space technology; Surface waves;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050592
Filename
1050592
Link To Document