DocumentCode
880391
Title
Bipolar high-speed low-power gates with double implanted transistors
Author
Graul, Jürgen ; Kaiser, Hans ; Wilhelm, Wilhelm J. ; Ryssel, Heiner
Volume
10
Issue
4
fYear
1975
fDate
8/1/1975 12:00:00 AM
Firstpage
201
Lastpage
204
Abstract
Speed power relations oxide isolated double implanted subnanosecond gate circuits (ECL and E/SUP 2/CL) were investigated in comparison to double diffused circuits. Under optimizing aspects with respect to propagation delay, data of double implanted integrated bipolar transistors and circuit performance are given dependent on implantation parameters.
Keywords
Bipolar transistors; Current-mode logic; Digital integrated circuits; Logic gates; Monolithic integrated circuits; bipolar transistors; current-mode logic; digital integrated circuits; logic gates; monolithic integrated circuits; Boron; Circuits; Diffusion processes; Ion implantation; Isolation technology; Logic gates; Microwave transistors; Oxidation; Propagation delay; Reproducibility of results;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050594
Filename
1050594
Link To Document