Title :
Heterojunction IMPATT diodes
Author_Institution :
Litton Solid State, Santa Clara, CA
fDate :
8/1/1992 12:00:00 AM
Abstract :
Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al 0.3Ga0.7As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less phase noise content. These and other properties are examined in detail, and a first-order theory of operation is proposed
Keywords :
III-V semiconductors; IMPATT diodes; aluminium compounds; electron device noise; gallium arsenide; DC characteristics; Ku-band; abrupt GaAs-Al0.3Ga0.7As heterojunction; first-order theory; heterojunction IMPATT diodes; p/N heterojunction; phase noise; semiconductor; Diodes; Doping; Gallium arsenide; Guidelines; Heterojunctions; Missiles; Phase change materials; Phase noise; Radar; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
