• DocumentCode
    880559
  • Title

    Heterojunction IMPATT diodes

  • Author

    Bailey, M.J.

  • Author_Institution
    Litton Solid State, Santa Clara, CA
  • Volume
    39
  • Issue
    8
  • fYear
    1992
  • fDate
    8/1/1992 12:00:00 AM
  • Firstpage
    1829
  • Lastpage
    1834
  • Abstract
    Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al 0.3Ga0.7As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less phase noise content. These and other properties are examined in detail, and a first-order theory of operation is proposed
  • Keywords
    III-V semiconductors; IMPATT diodes; aluminium compounds; electron device noise; gallium arsenide; DC characteristics; Ku-band; abrupt GaAs-Al0.3Ga0.7As heterojunction; first-order theory; heterojunction IMPATT diodes; p/N heterojunction; phase noise; semiconductor; Diodes; Doping; Gallium arsenide; Guidelines; Heterojunctions; Missiles; Phase change materials; Phase noise; Radar; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.144671
  • Filename
    144671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880559