Title :
Investigation of the Microstructure, Porosity, Adhesion, and Optical Properties of a WO3 Film Fabricated Using an E-Beam System With Ion Beam-Assisted Deposition
Author :
Po-Kai Chiu ; Donyau Chiang ; Chao-Te Lee ; Chien-Nan Hsiao ; Jer-Ren Yang ; Wen-Hao Cho ; Hung-Pin Chen ; Chien Lung Huang
Author_Institution :
Instrum. Technol. Res. Center, Nat. Res. Appl. Labs., Hsinchu, Taiwan
Abstract :
The relationship between the oxygen pressure, porosity, adhesion, and ion beam-assisted deposition (IAD) conditions for WO3 electrochromic films prepared using an electron-beam (E-beam) system was investigated. The adhesion of thin films on the substrate by sole E-beam system is very weak. The best method is proposed to obtain good adhesion and better porosity by combining the E-beam evaporation, and the microstructure and coloration efficiency were determined using a field emission scanning electron microscope (SEM) and a spectrometer, respectively. Notably, the effect of the oxygen pressure on the coloration efficiency and porosity of Ta2O5/WO3 films was found to be different. The optimal average transmittance of the electrochromic film in the bleached state was 11%, and in the colored state was 68%, when a Ta2O5 thin film was deposited in oxygen at a pressure at 9 × 10-4 torr using IAD, and a WO3 thin film was deposited at an oxygen pressure of 7.5 × 10-5 torr. The studied results are useful for the design of more efficient photoelectrochemical devices employing evaporated WO3 films.
Keywords :
adhesion; crystal microstructure; electrochromism; electron beam deposition; field emission electron microscopy; ion beam assisted deposition; porosity; scanning electron microscopy; thin films; tungsten compounds; visible spectra; IAD; SEM; WO3; WO3 electrochromic film; adhesion; bleached state; coloration efficiency; colored state; e-beam evaporation; electron beam system; field emission scanning electron microscope; ion beam-assisted deposition; microstructure; optical properties; optimal average transmittance; oxygen pressure; photoelectrochemical devices; porosity; pressure 0.000075 torr; pressure 0.0009 torr; spectrometer; thin films; Adhesives; Annealing; Glass; Indium tin oxide; Optical device fabrication; Optical films; Substrates; Annealing in H2; WO3; electrochromic devices (ECDs); electron beam (E-beam) system; ion beam-assisted deposition (IAD);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2013.2297450