1.5-μm wavelength narrow stripe distributed reflector lasers for high-performance operation

Author

Kim, Hyo-Chang ; Kanjo, Hiroshi ; Hasegawa, Takahiko ; Tamura, Shigeo ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

Volume

9

Issue

5

fYear

2003

Firstpage

1146

Lastpage

1152

Abstract

1.5 μm-wavelength narrow stripe distributed reflector (DR) lasers consisting of first-order vertical grating (VG) and distributed Bragg reflector (DBR) mirrors were realized by deeply etching the as-grown wafer and passivating the etched surface by SiO₂. Design consideration, fabrication, and lasing performances were studied. A low threshold current of 2.8 mA and a differential quantum efficiency of 28% from the front facet were achieved for a 1.3 μm stripe width and a 150 μm cavity length under room temperature (RT) continuous wave (CW) operation. Details of threshold behavior of these lasers are presented. Lasing performances of FP and DBR lasers are also described for comparison.

Keywords

distributed Bragg reflector lasers; distributed feedback lasers; etching; laser cavity resonators; laser mirrors; optical fabrication; silicon compounds; 1.3 mum; 1.5 mum; 150 mum; 2.8 mA; 28 percent; DBR laser; FP laser; SiO₂; as-grown wafer; continuous wave operation; design consideration; differential quantum efficiency; distributed Bragg reflector mirrors; etching; fabrication; high-performance operation; lasing performance; passivation; threshold behavior; threshold current; wavelength narrow stripe distributed reflector lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Fiber lasers; Gratings; Laser feedback; Laser modes; Semiconductor lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2003.819497

Filename

1263944