Reduction of loading effect by tungsten etchback in a magnetically enhanced reactive ion etcher

Author

Ha, J.H. ; Kim, S.W. ; Seol, Y.S. ; Park, H.K. ; Choi, S.H.

Author_Institution

Hyundai Semicond. R&D Lab., Ichon, South Korea

Volume

9

Issue

2

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

289

Lastpage

291

Abstract

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology

Keywords

metallisation; sputter etching; tungsten; SF₆/Ar mixtures; W; glue layer; loading effect; magnetically enhanced reactive ion etcher; plug loss; selectivity; tungsten etchback; Argon; Circuit topology; Magnetic materials; Monitoring; Plugs; Scanning electron microscopy; Sputter etching; Tin; Tungsten; Very large scale integration;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.492826

Filename

492826