DocumentCode :
88090
Title :
Investigation of Multi- 
Efficiency for Trigate GeOI p-MOSFETs Using Analytical Solution of 3-D Poisson’s Equation
Author :
Shu-Hua Wu ; Chang-Hung Yu ; Chun-Hsien Chiang ; Pin Su
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
62
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
88
Lastpage :
93
Abstract :
This paper provides an analytical subthreshold model for trigate MOSFETs with thin buried oxide (BOX) for multithreshold (multi-Vth) applications. This model shows a fairly good scalability in substrate bias and BOX thickness, which is crucial to the prediction of multi-Vth modulation through BOX. In addition, we demonstrate the application of our model in multi-Vth device design for trigate GeOI p-MOSFETs with the body-effect coefficient (γ) over a wide range of design space efficiently examined. We have shown an enhanced multi-Vth modulation behavior in trigate GeOI p-MOSFETs. Our study indicates that, for a given subthreshold swing and γ, the GeOI trigate p-MOSFET can possess a higher fin aspect ratio than the SOI counterpart.
Keywords :
MOSFET; Poisson equation; germanium; semiconductor device models; 3D Poisson equation; Ge; SOI; analytical subthreshold model; body-effect coefficient; buried oxide; device design; substrate bias; subthreshold swing; trigate p-MOSFET; Electric potential; Logic gates; MOSFET; MOSFET circuits; Modulation; Semiconductor device modeling; Substrates; GeOI; SOI; multi- $V_{mathrm {th}}$ design; multi-Vth design; multigate MOSFET; subthreshold; trigate MOSFET; trigate MOSFET.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2375871
Filename :
6982209
Link To Document :
