Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors

The radiation-induced positive charges trapped in an n-type MDS capacitor were observed to decrease with the number of C-V measurements. The positive gate bias applied on the capacitor was found to cause the decrease in the trapped charges. Its proposed mechanism was a recombination of the trapped positive charges with electrons injected from the Si substrate into the SiO2 layer due to the bias.