Title :
A second-generation carrier domain four-quadrant multiplier
Abstract :
A new design for a four-quadrant multiplier based on a carrier domain principle is presented. The base-collector transfer characteristic is predicted theoretically by an analysis of the motion of the domain´s centroid for quasi-static operation. The base-emitter (B-E) planar geometry is designed to yield nearly ideal domain motion for an input modulation depth of 95 percent. Exceptionally good linearity is predicted for ideal operation. Sources of nonideal operation are identified in experimental devices and means of eliminating these are presented.
Keywords :
Bipolar transistors; Linear integrated circuits; Monolithic integrated circuits; Multiplying circuits; Semiconductor devices; bipolar transistors; linear integrated circuits; monolithic integrated circuits; multiplying circuits; semiconductor devices; Circuits; Epitaxial layers; Geometry; Linearity; Low-frequency noise; Shape; Silicon; Testing; Time measurement; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050640
