DocumentCode
880908
Title
A second-generation carrier domain four-quadrant multiplier
Author
Smith, Jim
Volume
10
Issue
6
fYear
1975
Firstpage
448
Lastpage
457
Abstract
A new design for a four-quadrant multiplier based on a carrier domain principle is presented. The base-collector transfer characteristic is predicted theoretically by an analysis of the motion of the domain´s centroid for quasi-static operation. The base-emitter (B-E) planar geometry is designed to yield nearly ideal domain motion for an input modulation depth of 95 percent. Exceptionally good linearity is predicted for ideal operation. Sources of nonideal operation are identified in experimental devices and means of eliminating these are presented.
Keywords
Bipolar transistors; Linear integrated circuits; Monolithic integrated circuits; Multiplying circuits; Semiconductor devices; bipolar transistors; linear integrated circuits; monolithic integrated circuits; multiplying circuits; semiconductor devices; Circuits; Epitaxial layers; Geometry; Linearity; Low-frequency noise; Shape; Silicon; Testing; Time measurement; Transconductance;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050640
Filename
1050640
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