Title :
Hole Removal in Thin-Gate MOSFETs by Tunneling
Author :
Benedetto, J.M. ; Boesch, H.E., Jr. ; McLean, F.B. ; Mize, J.P.
Author_Institution :
US Army Electronics Research and Development Command Harry Diamond Laboratories Adelphi, Maryland 20783-1197
Abstract :
Fast time-resolved measurements of the response of thin-oxide MOSFETs show that radiation-induced holes are removed from the gate oxide by a tunneling process. A tunneling rate of 0.35 nm/decade from each interface is found for SiO2 at 77 K. Fast time-resolved measurements performed at room temperature are in qualitative agreement with low-temperature annealing data. Uncertainties in the room-temperature data did not allow extraction of firm and reliable values for the tunneling parameters.
Keywords :
Electrons; FETs; Laboratories; MOSFETs; Performance evaluation; Research and development; Temperature measurement; Testing; Threshold voltage; Tunneling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334043
