DocumentCode :
880928
Title :
The capacitance variation of GaAs surface barrier diode by photoeffect
Author :
Yamamoto, Takayuki ; Ota, Yoshiharu
Volume :
54
Issue :
4
fYear :
1966
fDate :
4/1/1966 12:00:00 AM
Firstpage :
691
Lastpage :
692
Keywords :
Capacitance; Conductivity; Gallium arsenide; Gold; Lighting; Mercury (metals); Ohmic contacts; P-i-n diodes; Schottky diodes; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4810
Filename :
1446740
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=880928
