Title :
Correlation of Hot-Carrier and Radiation Effects in MOS Transistors
Author :
McBrayer, J.D. ; Fleetwood, D.M. ; Pastorek, R.A. ; Jones, R.V.
Author_Institution :
Sandia National Laboratories Albuquerque, NM 87185
Abstract :
The effects of processing variations on the hot-carrier susceptibility of radiation-hardened CMOS transistors have been examined. It has been determined that many process variations which enhance radiation hardness also reduce hot-carrier-induced device degradation. The interactions of radiation and hot-carrier effects are demonstrated not to be additive.
Keywords :
CMOS process; Charge carrier processes; Degradation; Electrons; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Radiation effects; Transconductance;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334046
