• DocumentCode
    880946
  • Title

    Correlation of Hot-Carrier and Radiation Effects in MOS Transistors

  • Author

    McBrayer, J.D. ; Fleetwood, D.M. ; Pastorek, R.A. ; Jones, R.V.

  • Author_Institution
    Sandia National Laboratories Albuquerque, NM 87185
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    3935
  • Lastpage
    3939
  • Abstract
    The effects of processing variations on the hot-carrier susceptibility of radiation-hardened CMOS transistors have been examined. It has been determined that many process variations which enhance radiation hardness also reduce hot-carrier-induced device degradation. The interactions of radiation and hot-carrier effects are demonstrated not to be additive.
  • Keywords
    CMOS process; Charge carrier processes; Degradation; Electrons; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Radiation effects; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334046
  • Filename
    4334046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880946