DocumentCode
880956
Title
Hole Transport and Trapping in Field Oxides
Author
Boesch, H. Edwin, Jr. ; McLean, F.Barry
Author_Institution
Harry Diamond Laboratories US Army Electronics Research and Development Command 2800 Powder Mill Road Adelphi, MD 20783
Volume
32
Issue
6
fYear
1985
Firstpage
3940
Lastpage
3945
Abstract
The electric field, temperature, and oxide thickness dependencies of the transport of radiation-generated holes through thick (> 100 nm) SiO2 layers was measured using fast capacitance-voltage techniques. The transport is radically slowed with respect to that in thinner oxides under similar conditions and is well described by the continuous time random walk model. Significant hole trapping in the oxide bulk is also observed.
Keywords
Capacitance-voltage characteristics; Electron traps; FETs; Laboratories; MOSFETs; Powders; Research and development; Temperature dependence; Thickness measurement; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334047
Filename
4334047
Link To Document