Total Dose Indujced Hole Trapping and Interface State Generation in Bipolar Recessed Field Oxides

Ionizing radiation induced trapped hole density, Not, and interface state density, Nit, are investigated in bipolar recessed field oxides using parasitic nMOS transistors. Most of the results agree with previous studies made with capacitors on generic thick field oxides. New results include the effects of PN junction fringing fields on inversion voltage shift. Implications are made for total dose failure of bipolar microcircuits based on results of inversion voltage shift versus channel length and channel doping density. under contract DNA001-83-C-0115.