DocumentCode
880963
Title
Distortion in ultralinear solid-state devices
Author
Eachus, Jim
Volume
10
Issue
6
fYear
1975
fDate
12/1/1975 12:00:00 AM
Firstpage
485
Lastpage
497
Abstract
A technique for predicting distortion in ultralinear solid-state devices is presented. Typical results of intermodulation and cross modulation are shown, and the cause of cross modulation troughing as a function of bias is established. The dependence of distortion on various device parameters and bias level is examined, and conclusions are drawn regarding the degree of improvement in distortion performance available through device design techniques.
Keywords
Bipolar transistors; Electric distortion; Semiconductor device models; bipolar transistors; electric distortion; semiconductor device models; Broadband amplifiers; Capacitance; Distortion measurement; Intermodulation distortion; Nonlinear distortion; Packaging; Radio frequency; Semiconductor optical amplifiers; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050645
Filename
1050645
Link To Document