Title :
Distortion in ultralinear solid-state devices
fDate :
12/1/1975 12:00:00 AM
Abstract :
A technique for predicting distortion in ultralinear solid-state devices is presented. Typical results of intermodulation and cross modulation are shown, and the cause of cross modulation troughing as a function of bias is established. The dependence of distortion on various device parameters and bias level is examined, and conclusions are drawn regarding the degree of improvement in distortion performance available through device design techniques.
Keywords :
Bipolar transistors; Electric distortion; Semiconductor device models; bipolar transistors; electric distortion; semiconductor device models; Broadband amplifiers; Capacitance; Distortion measurement; Intermodulation distortion; Nonlinear distortion; Packaging; Radio frequency; Semiconductor optical amplifiers; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050645
