• DocumentCode
    880979
  • Title

    Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFET

  • Author

    Jobson-Scott, David M ; Roper, Graham B.

  • Author_Institution
    AWRE, Aldermaston, Berks, England
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    3961
  • Lastpage
    3964
  • Abstract
    The problem of transient gamma induced "second breakdown" in a specially developed radiation hard power MOSFET is discussed, and results of experiments in which neutron irradiation was used to control minority carrier lifetime are presented. The technique is only partially successful at reducing susceptibility to second breakdown.
  • Keywords
    Breakdown voltage; Charge carrier lifetime; Doping; Electric breakdown; FETs; Implants; MOSFET circuits; Neutrons; Photoconductivity; Power MOSFET;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334050
  • Filename
    4334050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880979