Title :
Neutron Irradiation as a Means of Reducing the Incidence of Radiation Induced Breakdown in a Radiation Hard Power MOSFET
Author :
Jobson-Scott, David M ; Roper, Graham B.
Author_Institution :
AWRE, Aldermaston, Berks, England
Abstract :
The problem of transient gamma induced "second breakdown" in a specially developed radiation hard power MOSFET is discussed, and results of experiments in which neutron irradiation was used to control minority carrier lifetime are presented. The technique is only partially successful at reducing susceptibility to second breakdown.
Keywords :
Breakdown voltage; Charge carrier lifetime; Doping; Electric breakdown; FETs; Implants; MOSFET circuits; Neutrons; Photoconductivity; Power MOSFET;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334050
