Complementary JFET negative-resistance devices

A new type of negative-resistance device utilizing a simple combination of complementary JFET´s, which is suitable not only for discrete use but for use as a unit cell in bipolar integrated circuits (IC´s) is proposed. The basic structure and the essential fabrication technology are described, and varieties of unitary negative-resistance devices using the integrated complementary JFET structure are proposed. The principle of operation is discussed with numerical and experimental analysis. Empirical formulas for practical design have been established with satisfactory agreements with experimental results.