• DocumentCode
    881101
  • Title

    Low-noise integrated silicon-gate FET amplifier

  • Author

    Boornard, A. ; Herrmann, E. ; Hsu, S.T.

  • Volume
    10
  • Issue
    6
  • fYear
    1975
  • Firstpage
    542
  • Lastpage
    544
  • Abstract
    A high-gain silicon-gate FET amplifier having low noise is described, and results of gain and noise measurements are presented. To obtain low flicker and thermal noise, the input FET was designed as a large-area device (0.336 mm/SUP 2/) with large channel width-to-length ratio (130:1).
  • Keywords
    Amplifiers; Field effect transistors; Linear integrated circuits; Monolithic integrated circuits; Thermal noise; amplifiers; field effect transistors; linear integrated circuits; monolithic integrated circuits; thermal noise; 1f noise; Capacitors; Circuits; FETs; Inductance; Low-noise amplifiers; Resistors; Semiconductor device noise; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1975.1050658
  • Filename
    1050658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881101